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PD -93996
IRF7707
HEXFET ? Power MOSFET
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Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
V DSS
-20V
R DS(on) max
22m ? @V GS = -4.5V
33m ? @V GS = -2.5V
I D
- 7.0A
- 6.0A
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Available in Tape & Reel
Description
HEXFET ? Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
1
2
D
8
7
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
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4
1=
2=
D
S
G
S
8=
7=
D
S
6
5
battery and load management.
3=
4=
S
G
6=
5=
S
D
TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
V GS
T J , T STG
Drain-Source Voltage
Continuous Drain Current, V GS @ -4.5V
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current ?
Maximum Power Dissipation ?
Maximum Power Dissipation ?
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
-20
-7.0
-5.7
-28
1.5
1.0
0.01
±12
-55 to +150
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
Max.
Units
R θ JA
www.irf.com
Maximum Junction-to-Ambient ?
83
°C/W
1
10/04/00
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